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    MWE6IC9100NBR1 datasheet by Freescale Semiconductor

    • RF LDMOS Wideband Integrated Power Amplifiers
    • Original
    • Yes
    • No
    • Transferred
    • EAR99
    • 8542.33.00.01
    • 8542.33.00.00
    • Find it at Findchips.com

    MWE6IC9100NBR1 datasheet preview

    MWE6IC9100NBR1 Frequently Asked Questions (FAQs)

    • The recommended PCB layout for optimal thermal performance involves using a 4-layer board with a solid ground plane, placing thermal vias under the device, and using a thermal pad on the bottom side of the board. Additionally, it's recommended to keep the thermal path as short as possible and to use a heat sink if possible.
    • To optimize the MWE6IC9100NBR1 for low power consumption, it's recommended to use the lowest possible supply voltage, reduce the operating frequency, and use the device's power-saving modes. Additionally, minimizing the number of active circuits and using a low-power oscillator can also help reduce power consumption.
    • The recommended decoupling capacitors for the MWE6IC9100NBR1 are 100nF to 1uF ceramic capacitors with a voltage rating of 10V to 16V, placed as close as possible to the device's power pins.
    • To ensure EMC with the MWE6IC9100NBR1, it's recommended to use a shielded enclosure, keep the device away from antennas and other RF sources, and use a common-mode choke or ferrite bead on the power supply lines. Additionally, using a PCB with a solid ground plane and minimizing the length of signal traces can also help reduce EMI.
    • The MWE6IC9100NBR1 has a maximum junction temperature of 150°C and a maximum storage temperature of -40°C to 150°C. It's recommended to keep the device within the specified operating temperature range to ensure reliable operation and prevent thermal damage.
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