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    Part Img PBSS306NX,115 datasheet by NXP Semiconductors

    • 100 V, 4.5 A NPN low VCEsat (BISS) transistor; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.21.00.75
    • 8541.21.00.80
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    PBSS306NX,115 datasheet preview

    PBSS306NX,115 Frequently Asked Questions (FAQs)

    • NXP recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
    • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow NXP's recommended thermal design guidelines. Also, consider derating the device's power handling at high temperatures.
    • Although the datasheet doesn't specify a maximum gate voltage, NXP recommends keeping it below 20V to prevent damage to the internal ESD protection diodes.
    • Yes, but be aware that the device's switching characteristics may degrade at high frequencies (>100 kHz). Ensure proper PCB layout, use a suitable gate driver, and consider the device's parasitic capacitances and inductances.
    • Implement a robust EOS protection scheme, including TVS diodes, resistors, and capacitors, to limit voltage transients and surge currents. Follow NXP's application notes and guidelines for EOS protection.
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