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    Part Img PBSS4350SPN,115 datasheet by NXP Semiconductors

    • 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
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    PBSS4350SPN,115 datasheet preview

    PBSS4350SPN,115 Frequently Asked Questions (FAQs)

    • The recommended operating voltage range for PBSS4350SPN,115 is 1.65 V to 3.6 V.
    • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 1 μF and a maximum ESR of 1 Ω. Additionally, the input capacitor should be at least 1 μF with an ESR of 0.1 Ω or less.
    • The maximum output current capability of PBSS4350SPN,115 is 1.5 A.
    • To handle thermal management, ensure a minimum copper area of 1 cm² for the exposed pad (EP) and use a thermal via to connect the EP to a solid copper plane on the PCB. Additionally, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK.
    • The EN (Enable) pin is used to enable or disable the device. When the EN pin is high, the device is enabled, and when it is low, the device is disabled.
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