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    Part Img PBSS5130T,215 datasheet by NXP Semiconductors

    • 30 V; 1 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
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    PBSS5130T,215 datasheet preview

    PBSS5130T,215 Frequently Asked Questions (FAQs)

    • NXP provides a recommended PCB layout in the application note AN11542, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
    • The input capacitor selection depends on the input voltage, current, and frequency. A general guideline is to choose a capacitor with a voltage rating of at least 1.5 times the maximum input voltage, and a capacitance value between 1-10 μF. Consult the application note AN11542 for more detailed guidance.
    • The maximum allowed voltage drop across the internal resistance of the PBSS5130T,215 is typically around 1.5 V. Exceeding this value may lead to reduced performance, increased power dissipation, or even device failure.
    • The PBSS5130T,215 is rated for operation up to 150°C, but derating is required for temperatures above 125°C. Consult the datasheet and application notes for specific guidance on thermal derating and design considerations for high-temperature applications.
    • To ensure EMC, follow proper PCB design practices, such as using a solid ground plane, minimizing loop areas, and using shielding or filtering components as needed. Additionally, consult the application note AN11542 for specific EMC guidelines and recommendations.
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