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    Part Img PD55035-E datasheet by STMicroelectronics

    • RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
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    PD55035-E datasheet preview

    PD55035-E Frequently Asked Questions (FAQs)

    • STMicroelectronics provides a recommended PCB layout in the application note AN5323, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and thermal dissipation.
    • The PD55035-E has a high power dissipation, so thermal management is crucial. Use a heat sink with a thermal interface material, ensure good airflow, and follow the recommended PCB layout to minimize thermal resistance. Monitor the junction temperature (TJ) to prevent overheating.
    • The input capacitors should be low-ESR, high-frequency capacitors with a minimum capacitance of 10uF and a voltage rating of at least 25V. X7R or X5R dielectric capacitors are recommended. The capacitors should be placed as close as possible to the VIN pin to minimize inductance.
    • Consult the datasheet and application notes for configuration guidelines. Use the STMicroelectronics' evaluation board as a reference design. Ensure the input voltage, output voltage, and current limits are within the recommended specifications. Verify the configuration using the provided calculation tools and simulation models.
    • Follow the recommended PCB layout and component placement to minimize EMI. Use a shielded enclosure and ensure good grounding. Add EMI filters or common-mode chokes as needed. Perform EMI and EMC testing to ensure compliance with relevant standards.
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