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    Part Img PDTC114EE,115 datasheet by NXP Semiconductors

    • NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EE ; hFE max:&gt;30 ; hFE min: 30 ; I<sub>O</sub> max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V; Package: SOT416 (SC-75); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.21.00.95
    • 8541.21.00.80
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    PDTC114EE,115 datasheet preview

    PDTC114EE,115 Frequently Asked Questions (FAQs)

    • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
    • Implement a heat sink or thermal interface material, and ensure good airflow. Consider using a thermocouple to monitor the device temperature.
    • The maximum allowed voltage on the input pins is 5.5V, but it's recommended to keep it below 5V to ensure reliable operation.
    • Yes, but ensure the layout is optimized for high-frequency operation, and consider using a ferrite bead or inductor to filter out high-frequency noise.
    • Check the input voltage, ensure proper pin connections, and verify the enable pin is properly driven. Use an oscilloscope to analyze the input and output signals.
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