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    Part Img PDTC114EU datasheet by NXP Semiconductors

    • PDTC114EU - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EU ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 200 mW; Resistor ratio: 1 ; VCEO max: 50 V
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    • EAR99
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    PDTC114EU datasheet preview

    PDTC114EU Frequently Asked Questions (FAQs)

    • NXP provides a recommended PCB layout in the application note AN11555, which includes guidelines for thermal vias, copper pours, and component placement to ensure optimal thermal performance.
    • The input capacitor selection depends on the input voltage, current, and frequency. NXP recommends using a low-ESR capacitor with a value between 10uF to 22uF, and a voltage rating of at least 1.5 times the input voltage. Refer to the application note AN11555 for more details.
    • The maximum allowed voltage drop across the PDTC114EU is 0.5V. Exceeding this voltage drop may affect the device's performance and reliability.
    • The PDTC114EU is rated for operation up to 125°C. However, the device's performance and reliability may degrade at high temperatures. NXP recommends derating the device's current and voltage ratings according to the application note AN11555.
    • To ensure EMC, follow the guidelines in the application note AN11555, which includes recommendations for PCB layout, component selection, and shielding. Additionally, ensure that the PDTC114EU is used in a system that meets the relevant EMC standards.
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