PESD5V0S2BT,215 datasheet by NXP Semiconductors

Description Low capacitance bi-directional double ESD protection diode in SOT23 package - C<sub>d</sub> max.: 45 pF; I<sub>RM</sub> max: 0.1A; Number of protected lines: 2 ; P<sub>PP</sub> max: 130 W; V<sub>BR</sub> typ.: 0 V; V<sub>RWM</sub>: 5 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Transferred
ECCN EAR99
HTS Code 8541.10.00.50
Schedule B 8541.10.00.50
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PESD5V0S2BT

PESD5V0S2BT,215 datasheet preview

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PESD5V0S2BT,215 Frequently Asked Questions (FAQs)

The PESD5V0S2BT,215 can withstand a maximum surge current of 5A according to the IEC 61000-4-5 standard.
The PESD5V0S2BT,215 protects against ESD by using a combination of voltage clamping and current limiting to prevent damage to the protected circuit.
The response time of the PESD5V0S2BT,215 to an ESD event is typically in the range of 1-2 nanoseconds.
Yes, the PESD5V0S2BT,215 is suitable for high-frequency applications up to 1 GHz due to its low capacitance and low inductance.
Yes, the PESD5V0S2BT,215 is AEC-Q101 qualified, making it suitable for use in automotive applications.