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    Part Img PESD5V0S2UQ,115 datasheet by NXP Semiconductors

    • Double ESD protection diodes in SOT663 package - C<sub>d</sub> max.: 215 pF; I<sub>RM</sub> max: 0.3A; Number of protected lines: 2 ; P<sub>PP</sub> max: 150 W; V<sub>BR</sub> typ.: 6.8 V; V<sub>RWM</sub>: 5 V; Package: SOT663 (SOT3); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.10.00.50
    • 8541.10.00.50
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    PESD5V0S2UQ,115 datasheet preview

    PESD5V0S2UQ,115 Frequently Asked Questions (FAQs)

    • The maximum surge current that PESD5V0S2UQ,115 can handle is 5A, as per the IEC 61000-4-5 standard.
    • The PESD5V0S2UQ,115 protects against ESD by using a combination of voltage clamping and current limiting to prevent damage to the protected circuit.
    • The response time of the PESD5V0S2UQ,115 to an ESD event is typically in the range of 1-2 nanoseconds.
    • Yes, the PESD5V0S2UQ,115 can be used in high-frequency applications up to 1 GHz, making it suitable for use in high-speed data lines and RF circuits.
    • The operating temperature range of the PESD5V0S2UQ,115 is -40°C to 125°C, making it suitable for use in a wide range of applications.
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