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    Part Img PH3120L,115 datasheet by NXP Semiconductors

    • N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 100 A; Q<sub>gd</sub> (typ): 12.8 nC; R<sub>DS(on)</sub>: 3.7@4.5V2.65@10V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT669 (LFPAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PH3120L,115 datasheet preview

    PH3120L,115 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output tracks as short as possible, and use a common mode choke to reduce EMI.
    • Use a high-quality output capacitor with low ESR, and ensure the input voltage is within the recommended range. Also, add a 10nF capacitor between the VOUT and GND pins to improve stability.
    • Although the datasheet specifies a maximum input voltage of 18V, it's recommended to limit the input voltage to 15V to ensure reliable operation and prevent damage to the device.
    • The device is rated for operation up to 125°C, but it's essential to ensure proper thermal management, such as using a heat sink or thermal pad, to prevent overheating and reduce the risk of thermal shutdown.
    • Check the input voltage, output capacitor, and PCB layout. Ensure the input voltage is within the recommended range, the output capacitor is of high quality, and the PCB layout is optimized for the device. Also, verify that the device is not overheating.
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