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    Part Img PH4840S,115 datasheet by NXP Semiconductors

    • N-channel TrenchMOS intermediate level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 94.5 A; Q<sub>gd</sub> (typ): 16 nC; R<sub>DS(on)</sub>: 4.1@10V mOhm; V<sub>DS</sub>max: 40 V; Package: SOT669 (LFPAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
    • Find it at Findchips.com

    PH4840S,115 datasheet preview

    PH4840S,115 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the layout symmetrical and avoid vias under the device. Refer to NXP's application note AN11555 for more details.
    • Implement a robust thermal design, including a heat sink and thermal interface material. Ensure good airflow and avoid thermal hotspots. The device is rated for operation up to 150°C, but derating may be necessary for high-temperature applications.
    • Use a shielded enclosure, and ensure good grounding and bonding. Add EMI filters and ferrite beads to the power supply lines. Follow NXP's guidelines for EMI and RFI suppression in the application note AN11555.
    • Use NXP's evaluation board and development tools, such as the PCT2075 evaluation board and the NXP's MCU-based development tools. Analyze the device's output signals using an oscilloscope and logic analyzer. Consult NXP's application notes and technical support for guidance.
    • Monitor the device's output voltage, current, and temperature. Also, track the input voltage, frequency, and power supply quality. Implement overvoltage, undervoltage, and overcurrent protection to ensure reliable operation.
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