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    Part Img PHB47NQ10T,118 datasheet by NXP Semiconductors

    • PHB47 - TRANSISTOR 47 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80

    PHB47NQ10T,118 datasheet preview

    PHB47NQ10T,118 Frequently Asked Questions (FAQs)

    • NXP recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
    • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and storage temperature (Tstg). Additionally, consider using a heat sink or thermal interface material to reduce the junction-to-ambient thermal resistance.
    • The maximum allowed voltage on the gate-source pin (Vgs) is ±20V. Exceeding this voltage may damage the device. It's essential to ensure that the gate driver circuitry is designed to stay within this voltage range.
    • To protect the device from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, consider adding ESD protection circuits, such as TVS diodes or ESD protection arrays, to the PCB design.
    • The recommended gate resistance (Rg) for optimal switching performance is typically in the range of 1-10 ohms. A lower Rg value can improve switching speed, but may also increase power losses. A higher Rg value can reduce power losses, but may also slow down the switching speed.
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