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    PHB66NQ03LT datasheet by NXP Semiconductors

    • PHB66NQ03LT - N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 66 A; Qgd (typ): 3.6 nC; RDS(on): 10.5@10V13.6@5V mOhm; VDSmax: 25 V
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    PHB66NQ03LT datasheet preview

    PHB66NQ03LT Frequently Asked Questions (FAQs)

    • NXP recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
    • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, including proper heat sinking, thermal pad connection, and PCB layout. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
    • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, for reliable operation, it's recommended to keep the input voltage within the recommended operating range of 3.3V to 5V.
    • The PHB66NQ03LT has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment.
    • The recommended power-up sequence is to apply the power supply voltage (VCC) before applying any input signals. This ensures that the internal voltage regulators and bias circuits are properly initialized before the device starts operating.
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