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    PHB95N03LT datasheet by Philips Semiconductors

    • Logic Level FET
    • Original
    • No
    • Transferred
    • EAR99
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    PHB95N03LT datasheet preview

    PHB95N03LT Frequently Asked Questions (FAQs)

    • The maximum junction temperature for the PHB95N03LT is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
    • To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate drive circuitry is capable of providing sufficient current to charge and discharge the gate capacitance.
    • For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Use a heat sink with a thermal resistance of less than 1°C/W and apply a thin layer of thermal interface material. Keep the PCB layout compact and symmetrical to minimize thermal gradients.
    • Yes, the PHB95N03LT is suitable for high-frequency switching applications up to 100 kHz. However, be aware of the device's switching losses, which increase with frequency. Ensure proper gate drive and layout to minimize switching losses and ringing. Also, consider using a snubber circuit to reduce electromagnetic interference (EMI).
    • Use a voltage clamp or a zener diode to protect the device from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current. Implement a shutdown circuit or a current limiter to prevent damage from overcurrent conditions.
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