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    Part Img PHD18NQ10T,118 datasheet by NXP Semiconductors

    • N-channel TrenchMOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 18 A; Q<sub>gd</sub> (typ): 8 nC; R<sub>DS(on)</sub>: 90@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT428 (DPAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    PHD18NQ10T,118 datasheet preview

    PHD18NQ10T,118 Frequently Asked Questions (FAQs)

    • NXP recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
    • To ensure reliable operation at high temperatures, it's essential to follow NXP's recommended thermal design guidelines, including proper heat sinking, thermal interface materials, and PCB layout. Additionally, consider derating the device's power dissipation and voltage ratings according to the datasheet's thermal derating curves.
    • The PHD18NQ10T,118 has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Additionally, consider adding external ESD protection devices, such as TVS diodes, to protect the device from external ESD events.
    • Yes, the PHD18NQ10T,118 is qualified for automotive and high-reliability applications. However, it's essential to follow NXP's specific guidelines for these applications, including additional testing, validation, and qualification procedures.
    • NXP provides a range of tools and resources, including evaluation boards, application notes, and simulation models, to help troubleshoot and debug issues with the PHD18NQ10T,118. Additionally, consider using oscilloscopes, logic analyzers, and other debugging tools to identify and resolve issues.
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