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    Part Img PHD34NQ10T,118 datasheet by NXP Semiconductors

    • N-channel TrenchMOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 35 A; Q<sub>gd</sub> (typ): 18 nC; R<sub>DS(on)</sub>: 40@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT428 (DPAK); Container: Tape reel smd
    • Original
    • Yes
    • Obsolete
    • EAR99
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    PHD34NQ10T,118 datasheet preview

    PHD34NQ10T,118 Frequently Asked Questions (FAQs)

    • The recommended operating voltage range for PHD34NQ10T,118 is 1.71 V to 3.6 V, as specified in the datasheet.
    • To ensure the stability of the output voltage, it's essential to follow the recommended layout and decoupling guidelines, use a suitable output capacitor, and minimize the distance between the regulator and the load.
    • The maximum output current capability of PHD34NQ10T,118 is 1 A, as specified in the datasheet. However, it's recommended to derate the output current based on the ambient temperature and other operating conditions.
    • The PHD34NQ10T,118 has built-in input voltage transient protection and noise filtering capabilities. However, it's still recommended to use external filtering components, such as capacitors and resistors, to further improve the noise immunity and transient response.
    • The thermal shutdown temperature of PHD34NQ10T,118 is typically around 150°C to 170°C, as specified in the datasheet. The device will automatically shut down when the junction temperature exceeds this threshold to prevent damage.
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