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    Part Img PHD78NQ03LT,118 datasheet by NXP Semiconductors

    • N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 4.0 nC; R<sub>DS(on)</sub>: 9@10V13.5@5V mOhm; V<sub>DS</sub>max: 25 V; Package: SOT428 (DPAK); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
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    PHD78NQ03LT,118 datasheet preview

    PHD78NQ03LT,118 Frequently Asked Questions (FAQs)

    • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation.
    • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C.
    • Use a multi-layer PCB with a solid ground plane, keep sensitive traces away from the device, and use shielding or filtering components to minimize EMI. Follow NXP's PCB design guidelines for optimal EMI performance.
    • Use a low-ESR capacitor (e.g., ceramic or film capacitor) for input decoupling, and ensure the input voltage is within the recommended range. Implement a soft-start circuit to reduce inrush current and minimize voltage dropout.
    • Use a 4-wire Kelvin connection for accurate voltage and current measurements. Ensure the test setup is properly calibrated, and use a high-impedance probe to minimize loading effects. Follow NXP's application notes for specific test and measurement guidelines.
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