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    Part Img PHD9NQ20T,118 datasheet by NXP Semiconductors

    • N-channel TrenchMOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 8.7 A; Q<sub>gd</sub> (typ): 12 nC; R<sub>DS(on)</sub>: 400@10V mOhm; V<sub>DS</sub>max: 200 V; Package: SOT428 (DPAK); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PHD9NQ20T,118 datasheet preview

    PHD9NQ20T,118 Frequently Asked Questions (FAQs)

    • NXP recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
    • To ensure reliable operation at high temperatures, it's essential to follow NXP's recommended thermal design guidelines, including proper heat sinking, thermal interface materials, and PCB layout. Additionally, consider using thermal simulation tools to analyze the device's thermal performance.
    • While the PHD9NQ20T,118 has internal ESD protection, it's not designed to withstand repeated or high-energy ESD events. External ESD protection devices may be necessary to ensure robustness in harsh environments. Consult NXP's application notes for guidance on ESD protection design.
    • Yes, the PHD9NQ20T,118 is qualified for automotive and high-reliability applications. However, it's essential to follow NXP's guidelines for design, manufacturing, and testing to ensure the device meets the required standards and specifications.
    • To troubleshoot issues related to the internal voltage regulator, start by verifying the input voltage, output voltage, and current consumption. Check for any signs of overheating, and ensure that the device is properly decoupled. Consult NXP's application notes and technical support resources for further guidance.
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