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    PHD9NQ20T datasheet by Philips Semiconductors

    • N-channel TrenchMOS Transistor
    • Original
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com

    PHD9NQ20T datasheet preview

    PHD9NQ20T Frequently Asked Questions (FAQs)

    • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2 oz copper thickness and a thermal via array under the pad are suggested. Refer to the Philips Semiconductors application note AN11174 for more details.
    • Ensure proper heat sinking, avoid overheating, and follow the recommended operating conditions. The device is rated for operation up to 150°C, but derating may be necessary for high-temperature applications.
    • The PHD9NQ20T has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. A human body model (HBM) of 2 kV and a charged device model (CDM) of 1 kV are recommended.
    • Yes, the PHD9NQ20T is suitable for high-reliability and automotive applications. It's AEC-Q101 qualified and meets the requirements for automotive-grade devices. However, additional testing and validation may be required for specific applications.
    • Consult the Philips Semiconductors troubleshooting guide AN11173 for common issues and solutions. Also, ensure proper PCB design, layout, and assembly, and verify that the device is operated within the recommended conditions.
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