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    Part Img PHE13009,127 datasheet by NXP Semiconductors

    • Silicon Diffused Power Transistor - I<sub>C (DC)</sub>: 12 A; I<sub>C (SAT)</sub>: 6 A; tf<sub>(max)</sub>: 0.15s; V<sub>CESM</sub>: 700 V; Package: week 1, 2005
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PHE13009,127 datasheet preview

    PHE13009,127 Frequently Asked Questions (FAQs)

    • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern around the device.
    • Implement a heat sink or thermal interface material, and ensure good airflow. Monitor the device's junction temperature (Tj) and adjust the thermal design accordingly.
    • Exceeding Tj can lead to reduced lifespan, decreased performance, and potential device failure. Ensure the device operates within the recommended temperature range (–40°C to 150°C) to maintain reliability.
    • Yes, but ensure the device is properly secured to the PCB using a suitable adhesive or mechanical fastening method. Vibration testing may be necessary to validate the design.
    • Implement ESD protection measures during handling, storage, and assembly. Use ESD-safe materials, and follow proper grounding and shielding practices to prevent damage.
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