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    Part Img PHK12NQ10T,518 datasheet by NXP Semiconductors

    • TrenchMOS standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 12 A; Q<sub>gd</sub> (typ): 9 nC; R<sub>DS(on)</sub>: 28@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13&quot;
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PHK12NQ10T,518 datasheet preview

    PHK12NQ10T,518 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the PHK12NQ10T is -40°C to 150°C.
    • To ensure reliability, follow the recommended derating guidelines, use a suitable thermal interface material, and ensure proper heat sinking and cooling.
    • Follow the recommended PCB layout and thermal design guidelines provided in the NXP application note AN11160, and consult with a thermal design expert if necessary.
    • Use a suitable PCB design with adequate copper thickness, ensure proper heat sinking, and consider using a heat sink or thermal interface material to manage power dissipation.
    • Follow standard ESD handling procedures, use ESD-protective packaging and storage, and ensure that all personnel handling the device are grounded.
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