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    Part Img PHT8N06LT,135 datasheet by NXP Semiconductors

    • TrenchMOS transistor Logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 7.5 A; Q<sub>gd</sub> (typ): 5 nC; R<sub>DS(on)</sub>: 80@5V mOhm; V<sub>DS</sub>max: 55 V; Package: SOT223 (SC-73); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    PHT8N06LT,135 datasheet preview

    PHT8N06LT,135 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the PHT8N06LT,135 is -40°C to 150°C.
    • To ensure reliability, it's essential to follow proper thermal design and layout guidelines, including providing adequate heat sinking and thermal management.
    • A recommended PCB layout for minimizing EMI includes using a solid ground plane, keeping signal traces short and away from the device, and using shielding or filtering if necessary.
    • The PHT8N06LT,135 is rated for a maximum drain-source voltage of 60V. If your application requires higher voltages, you may need to consider a different device or add external protection circuitry.
    • To protect the device from ESD, handle the device by the body or use an ESD wrist strap, and ensure that the PCB and assembly process follow ESD-safe guidelines.
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