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    Part Img PMBFJ112,215 datasheet by NXP Semiconductors

    • N-channel junction FETs - CRS: typ. 3 pF; I<sub>DSS</sub>: 5 mA; I<sub>DSS</sub> min.: 5 mA; I<sub>G</sub>: 50 mA; R<sub>DS(on)</sub>: 50 Ohm; t<sub>off</sub>: 35 ns; t<sub>on</sub>: typ. 13 ns; -V(P)GS: 1 to 5 V; V<sub>(P)GS</sub>: 1 V; V<sub>(P)GS</sub>: 5 V; V<sub>DS</sub>max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
    • Original
    • Yes
    • Obsolete
    • EAR99
    • 8541.21.00.95
    • 8541.21.00.80
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    PMBFJ112,215 datasheet preview

    PMBFJ112,215 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output tracks as short as possible and use a common mode choke to reduce EMI.
    • Use a high-quality output capacitor with low ESR, ensure the input voltage is within the recommended range, and add a 10nF capacitor between the VCC and GND pins to filter out noise.
    • The maximum allowed input voltage ripple is 1% of the input voltage, but it's recommended to keep it below 0.5% to ensure stable operation.
    • Yes, but the device is only specified for operation up to 125°C. Above this temperature, the device's performance and reliability may degrade. Consider using a heat sink or thermal management system to keep the device within the recommended temperature range.
    • Use an external current limiting resistor or a fuse in series with the input voltage, and consider adding overvoltage protection (OVP) and undervoltage protection (UVP) circuits to prevent damage from voltage transients.
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