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    Part Img PMBTA42,215 datasheet by NXP Semiconductors

    • NPN high-voltage transistor - Complement: PMBTA92 ; fT min: 50 MHz; hFE max:&gt;40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.21.00.95
    • 8541.21.00.80
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    PMBTA42,215 datasheet preview

    PMBTA42,215 Frequently Asked Questions (FAQs)

    • A good PCB layout for optimal thermal performance involves placing the device near a thermal pad or a heat sink, using a large copper area for heat dissipation, and minimizing thermal resistance by using vias and thermal vias.
    • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves, ensure good thermal design, and consider using a heat sink or thermal interface material to reduce junction temperature.
    • To prevent damage, handle the device by the body, avoid touching the leads, store the device in an anti-static bag or wrap, and avoid exposing it to moisture, extreme temperatures, or mechanical stress.
    • While the PMBTA42,215 is primarily designed for linear applications, it can be used in switching applications with proper design considerations, such as ensuring the device is operated within its safe operating area (SOA) and using a suitable driver circuit.
    • Select the base and emitter resistors based on the desired bias point, ensuring the transistor is operated within its recommended operating conditions. A general rule of thumb is to choose a base resistor value between 1 kΩ to 10 kΩ and an emitter resistor value between 100 Ω to 1 kΩ.
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