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    Part Img PMEG2010AEB,115 datasheet by NXP Semiconductors

    • 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package - C<sub>d</sub> max.: 30@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 6 A; I<sub>R</sub> max: 1.5@VR=20V mA; V<sub>F</sub>max: 290@IF=0.1A mV; V<sub>R</sub>: 20 V; Package: SOD523 (SC-79); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.10.00.50
    • 8541.10.00.50
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    PMEG2010AEB,115 datasheet preview

    PMEG2010AEB,115 Frequently Asked Questions (FAQs)

    • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
    • Use a heat sink, ensure good airflow, and consider using a thermal interface material (TIM) to improve heat transfer. Also, follow the recommended operating conditions and derating guidelines.
    • The maximum allowed voltage on the enable pin (EN) is 6V. Exceeding this voltage may damage the device.
    • Yes, the PMEG2010AEB,115 is AEC-Q100 qualified, making it suitable for automotive and high-reliability applications. However, ensure you follow the recommended operating conditions and guidelines.
    • Use the formula: Pd = (Vin - Vout) x Iout. Calculate the junction temperature using the thermal resistance (Rthja) and the power dissipation. Refer to the datasheet for the Rthja value.
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