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    Part Img PMEG4010EH,115 datasheet by NXP Semiconductors

    • 1 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 50@VR=1V pF; Configuration: single ; I<sub>F</sub>: 1 A; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 0.1@VR=40V mA; V<sub>F</sub>max: 640@IF=1A mV; V<sub>R</sub>: 40 V; Package: SOD123F (SOD2); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.10.00.80
    • 8541.10.00.80
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    PMEG4010EH,115 datasheet preview

    PMEG4010EH,115 Frequently Asked Questions (FAQs)

    • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation.
    • Implement a thermal management strategy, such as heat sinks, thermal interfaces, or fans. Ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C.
    • Use X7R or X5R ceramic capacitors with a voltage rating of 10V or higher. For input capacitors, use 10uF to 22uF, and for output capacitors, use 10uF to 47uF.
    • Use a shielded enclosure, keep the device away from antennas and high-frequency circuits, and ensure proper grounding and decoupling. Implement EMI filters or common-mode chokes if necessary.
    • Apply the input voltage (VIN) first, followed by the enable signal (EN). Ensure the input voltage is stable before applying the enable signal.
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