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    Part Img PMEG6002EB,115 datasheet by NXP Semiconductors

    • 0.2 A very low VF MEGA Schottky barrier rectifiers - C<sub>d</sub> max.: 20@VR=1V pF; Configuration: single ; I<sub>F</sub>: 0.2 A; I<sub>FSM</sub> max: 2.5 A; I<sub>R</sub> max: 0.1@VR=60V mA; V<sub>F</sub>max: 600@IF=0.2A mV; V<sub>R</sub>: 60 V; Package: SOD523 (SC-79); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.10.00.50
    • 8541.10.00.50
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    PMEG6002EB,115 datasheet preview

    PMEG6002EB,115 Frequently Asked Questions (FAQs)

    • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation.
    • Implement a thermal management strategy, such as heat sinks, thermal interfaces, or fans. Ensure the device is operated within the specified temperature range (-40°C to 150°C) and consider derating the device for high-temperature applications.
    • Use X7R or X5R ceramic capacitors with a voltage rating of 10V or higher. For input capacitors, use 1-10uF capacitors with an ESR of <1 ohm. For output capacitors, use 10-22uF capacitors with an ESR of <1 ohm.
    • Use a shielded enclosure, keep the device away from antennas and other EMI sources, and ensure proper grounding and decoupling. Implement EMI filters or common-mode chokes if necessary.
    • Use a reflow soldering profile with a peak temperature of 260°C, a dwell time of 30-60 seconds, and a ramp rate of 3°C/s. Ensure the device is soldered within the specified temperature range.
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