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    Part Img PMGD175XN,115 datasheet by NXP Semiconductors

    • PMGD175XN - PMGD175XN - 30 V, dual N-channel Trench MOSFET
    • Original
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    PMGD175XN,115 datasheet preview

    PMGD175XN,115 Frequently Asked Questions (FAQs)

    • NXP recommends a thermal pad on the bottom of the device, connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
    • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure good airflow around the device. Additionally, consider derating the device's power handling capabilities at higher temperatures.
    • Although the datasheet specifies a maximum input voltage of 30V, it's recommended to limit the input voltage to 25V to ensure reliable operation and prevent damage to the device.
    • To protect the device from ESD, follow proper handling and storage procedures, use ESD-safe materials, and consider adding ESD protection devices, such as TVS diodes, to the PCB design.
    • NXP recommends a soldering profile with a peak temperature of 260°C, a dwell time above 220°C of 30-60 seconds, and a total process time of 3-5 minutes. It's essential to follow the recommended soldering profile to prevent damage to the device.
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