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    PSMN0R9-25YLC datasheet by NXP Semiconductors

    • N-channel 25 V 0.99 mOhm logic level MOSFET in LFPAK using NextPower technology
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
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    PSMN0R9-25YLC datasheet preview

    PSMN0R9-25YLC Frequently Asked Questions (FAQs)

    • NXP recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
    • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow NXP's recommended thermal design guidelines. Also, consider derating the device's power handling at high temperatures.
    • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
    • Yes, the PSMN0R9-25YLC is suitable for high-frequency switching applications up to 1 MHz. However, ensure proper PCB layout, decoupling, and gate drive design to minimize ringing and losses.
    • Handle the device with ESD-protective equipment, use an ESD-protected workstation, and follow proper ESD handling procedures. Also, consider adding ESD protection components, such as TVS diodes, to the PCB design.
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