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    PSMN0R9-30YLD datasheet by NXP Semiconductors

    • N-channel 30 V, 0.87 mOhm logic level MOSFET in LFPAK56 using NextPowerS3 Technology
    • Original
    • Unknown
    • Unknown
    • Transferred
    • EAR99
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    PSMN0R9-30YLD datasheet preview

    PSMN0R9-30YLD Frequently Asked Questions (FAQs)

    • NXP recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
    • Ensure proper heat sinking, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
    • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage.
    • Yes, the PSMN0R9-30YLD is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper layout and decoupling to minimize parasitic inductance and capacitance.
    • Handle the device with ESD-protective equipment, use an ESD-protected workstation, and ensure the PCB has ESD protection circuits. Also, consider using an ESD protection diode or TVS diode on the gate pin.
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