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    PSMN1R2-25YLC datasheet by NXP Semiconductors

    • N-channel 25 V 1.3 mOhm logic level MOSFET in LFPAK usingNextPower technology
    • Original
    • Yes
    • Transferred
    • EAR99
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    PSMN1R2-25YLC datasheet preview

    PSMN1R2-25YLC Frequently Asked Questions (FAQs)

    • NXP recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
    • To ensure reliable operation at high temperatures, it's essential to follow NXP's recommended thermal design guidelines, including proper heat sinking, and to derate the device's power handling according to the temperature derating curve provided in the datasheet.
    • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
    • Yes, the PSMN1R2-25YLC is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching characteristics, such as rise and fall times, and to ensure proper PCB layout and decoupling to minimize ringing and oscillations.
    • To protect the device from ESD, it's recommended to follow proper handling and storage procedures, including the use of ESD-safe materials and equipment, and to implement ESD protection circuits in the application, such as TVS diodes or ESD protection arrays.
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