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    RF1S30P06SM datasheet by Harris Semiconductor

    • 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs
    • Original
    • No
    • Unknown
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    RF1S30P06SM datasheet preview

    RF1S30P06SM Frequently Asked Questions (FAQs)

    • The thermal resistance (RθJA) of the RF1S30P06SM is typically around 40°C/W, but it can vary depending on the specific application and PCB design.
    • To ensure proper biasing, follow the recommended biasing circuit and voltage levels outlined in the datasheet. Typically, a voltage regulator and resistive divider network are used to set the gate-source voltage (Vgs) and drain-source voltage (Vds) within the recommended operating ranges.
    • The RF1S30P06SM is designed to operate up to 1 GHz, but its performance may degrade at higher frequencies. For optimal performance, it's recommended to operate the device within the 10 MHz to 500 MHz frequency range.
    • To handle the high power dissipation of the RF1S30P06SM, ensure proper heat sinking, such as using a heat sink with a thermal interface material, and follow recommended PCB design guidelines for thermal management. Additionally, consider using a thermal pad or thermal via to improve heat dissipation.
    • To minimize parasitic inductance and ensure optimal performance, follow recommended PCB design guidelines, such as using a ground plane, minimizing trace lengths, and using a 50-ohm transmission line impedance. Additionally, consider using a shielded enclosure to reduce electromagnetic interference (EMI).
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