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    RFP15N05L datasheet by Harris Semiconductor

    • Power MOSFET Data Book 1990
    • Scan
    • No
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    RFP15N05L datasheet preview

    RFP15N05L Frequently Asked Questions (FAQs)

    • The thermal resistance of the RFP15N05L is typically around 2.5°C/W (junction-to-case) and 60°C/W (junction-to-ambient) when mounted on a standard PCB.
    • Yes, the RFP15N05L is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, gate charge, and layout parasitics to ensure reliable operation.
    • To ensure proper biasing, follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings, and use a suitable gate driver circuit to provide a clean, high-current drive signal.
    • To minimize parasitic inductance and capacitance, use a compact, symmetrical layout with short, wide traces, and place the device close to the power source and load. Avoid using vias under the device and keep the drain and source pins as close as possible.
    • Yes, you can use multiple RFP15N05L devices in parallel to increase current handling, but it's crucial to ensure that each device is properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
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