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    RFP15N06L datasheet by Harris Semiconductor

    • Power MOSFET Data Book 1990
    • Scan
    • No
    • Unknown
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    RFP15N06L datasheet preview

    RFP15N06L Frequently Asked Questions (FAQs)

    • The thermal resistance of the RFP15N06L is typically around 1.5°C/W (junction-to-case) and 60°C/W (junction-to-ambient) when mounted on a standard PCB.
    • Yes, the RFP15N06L is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and fast switching times.
    • To ensure reliable operation, it's essential to provide adequate heat sinking and thermal management to keep the junction temperature below 150°C. Additionally, consider derating the device's power handling capabilities at high temperatures.
    • The recommended gate drive voltage for the RFP15N06L is between 10V and 15V to ensure reliable switching and minimize power losses.
    • Yes, the RFP15N06L can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
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