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    RFP50N05 datasheet by Harris Semiconductor

    • Power Field-Effect Transistor (MegaFET)
    • Scan
    • No
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    RFP50N05 datasheet preview

    RFP50N05 Frequently Asked Questions (FAQs)

    • The maximum junction temperature of RFP50N05 is 175°C.
    • Yes, RFP50N05 is suitable for high-frequency applications up to 1 MHz due to its low gate charge and low output capacitance.
    • To ensure reliability, follow proper PCB layout guidelines, use a heat sink if necessary, and ensure the device is operated within its specified voltage and current ratings.
    • The recommended gate resistor value for RFP50N05 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
    • Yes, RFP50N05 can be paralleled to increase current handling, but it's essential to ensure that the devices are properly matched and the layout is designed to minimize current imbalance.
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