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    S25FL256SAGBHAA03 datasheet by Cypress Semiconductor

    • Integrated Circuits (ICs) - Memory - IC 256 MB FLASH MEMORY
    • Original
    • Yes
    • Transferred
    • 3A991.B.1.A
    • 8542.32.00.51
    • 8542.32.00.50
    • Find it at Findchips.com

    S25FL256SAGBHAA03 datasheet preview

    S25FL256SAGBHAA03 Frequently Asked Questions (FAQs)

    • The S25FL256SAGBHAA03 has a minimum of 100,000 erase cycles per sector, and a minimum of 10,000 erase cycles per block.
    • The HOLD# pin should be driven high during low power modes to prevent unwanted writes or erases. It's recommended to use an external pull-up resistor to ensure the pin is held high.
    • The recommended method is to use the RY/BY# pin, which goes low during a program or erase operation and returns high when the operation is complete. Alternatively, you can use the EWSR (Enable Write Status Register) bit to poll the status register.
    • The WP# pin should be driven high during power-up and power-down sequences to prevent unwanted writes or erases. It's recommended to use an external pull-up resistor to ensure the pin is held high.
    • The S25FL256SAGBHAA03 has a maximum operating frequency of 104 MHz.
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