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    S25FS128SAGBHV203 datasheet by Cypress Semiconductor

    • NOR
    • Original
    • Yes
    • Unknown
    • Transferred
    • 3A991.B.1.A
    • 8542.32.00.51
    • 8542.32.00.50
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    S25FS128SAGBHV203 datasheet preview

    S25FS128SAGBHV203 Frequently Asked Questions (FAQs)

    • The S25FS128SAGBHV203 has a minimum of 100,000 erase cycles per sector, and a total of 2,000,000 erase cycles for the entire device.
    • The HOLD# pin should be driven high during low power modes to prevent the device from entering a busy state. If the HOLD# pin is driven low, the device will exit the low power mode and resume normal operation.
    • The recommended method is to use the RY/BY# pin, which goes low during a program or erase operation and returns high when the operation is complete. Alternatively, the device can be polled using the Read Status Register (RDSR) command.
    • Yes, the S25FS128SAGBHV203 is designed to operate from a 1.7V to 2.0V power supply, making it suitable for use in systems with a 1.8V power supply.
    • The WP# pin should be driven high during normal operation to enable write operations. If the WP# pin is driven low, the device will be in a write-protected state and write operations will be inhibited.
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