S29GL01GS11DHV023 datasheet by Cypress Semiconductor

S29GL01GS11DHV023 Frequently Asked Questions (FAQs)

• What is the recommended operating voltage range for this flash memory?
  The recommended operating voltage range for the S29GL01GS11DHV023 is 2.7V to 3.6V.
• How do I handle the hold pin (HOLD#) during read and write operations?
  The hold pin (HOLD#) should be driven low to allow read and write operations. When driven high, the device will enter a 'hold' state, suspending the current operation.
• What is the purpose of the write protect pin (WP#) and how do I use it?
  The write protect pin (WP#) is used to prevent accidental writes to the device. When driven low, the device is write-protected. When driven high, the device is writable.
• How do I determine the device density and organization?
  The S29GL01GS11DHV023 is a 1Gb (128MB) flash memory device, organized as 2048 blocks of 64KB each.
• What is the maximum number of erase cycles for this device?
  The S29GL01GS11DHV023 has a maximum of 100,000 erase cycles per block.