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    Part Img SI1035X-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 180MA SC-89
    • Original
    • Yes
    • Obsolete
    • EAR99
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    SI1035X-T1-GE3 datasheet preview

    SI1035X-T1-GE3 Frequently Asked Questions (FAQs)

    • A recommended PCB layout for optimal thermal performance would be to use a large copper pad under the device, connected to a solid ground plane, and to use thermal vias to dissipate heat. Additionally, keeping the PCB layer stack-up symmetrical and using a thermal interface material (TIM) can help improve thermal performance.
    • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, use a suitable thermal interface material, and ensure good airflow around the device. Additionally, consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
    • The maximum allowed voltage transient for the SI1035X-T1-GE3 is not explicitly stated in the datasheet. However, as a general guideline, it's recommended to limit voltage transients to 10% of the maximum rated voltage to ensure reliable operation and prevent damage to the device.
    • While the SI1035X-T1-GE3 is a high-speed device, its suitability for high-frequency switching applications depends on the specific requirements. The device's switching characteristics, such as rise and fall times, should be carefully evaluated to ensure they meet the application's requirements. Additionally, consider the device's power losses and thermal performance at high frequencies.
    • To handle ESD protection for the SI1035X-T1-GE3, follow proper ESD handling procedures during assembly and storage, such as using ESD-safe materials and equipment. Additionally, consider adding external ESD protection devices, such as TVS diodes, to the circuit design to protect the device from electrostatic discharge events.
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