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    Part Img SI2324DS-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 2.3A SOT-23
    • Original
    • Active
    • EAR99
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    SI2324DS-T1-GE3 datasheet preview

    SI2324DS-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI2324DS-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
    • To ensure the SI2324DS-T1-GE3 operates within its recommended operating conditions, maintain a supply voltage between 1.8V and 5.5V, and keep the junction temperature below 150°C. Also, ensure the input voltage does not exceed the maximum rating of 5.5V.
    • The maximum current rating for the SI2324DS-T1-GE3 is 100mA per channel. Exceeding this rating may cause the device to overheat or fail prematurely.
    • To prevent ESD damage, handle the SI2324DS-T1-GE3 with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or exposing it to static electricity.
    • The recommended storage temperature for the SI2324DS-T1-GE3 is between -40°C and 125°C. Storing the device outside this range may affect its reliability or performance.
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