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    Part Img SI3407DV-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 8A 6-TSOP
    • Original
    • Yes
    • Active
    • EAR99
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    SI3407DV-T1-GE3 datasheet preview

    SI3407DV-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI3407DV-T1-GE3 is a standard QFN16 package with a 3x3mm body size and 0.5mm pitch. A recommended land pattern is available in the Vishay Intertechnologies application note AN81142.
    • To ensure proper soldering, follow the recommended soldering profile and guidelines outlined in the Vishay Intertechnologies application note AN81142. Additionally, use a solder paste with a melting point between 217°C to 220°C and a peak temperature of 240°C to 250°C.
    • The SI3407DV-T1-GE3 has an operating temperature range of -40°C to 125°C. However, the device can be operated up to 150°C for short-term excursions, but this may affect its reliability and lifespan.
    • To prevent electrostatic discharge (ESD) damage, handle the SI3407DV-T1-GE3 in an ESD-protected environment, wear an ESD strap or wrist strap, and use ESD-safe packaging and materials. Follow the guidelines outlined in the ANSI/ESD S20.20 standard.
    • Store the SI3407DV-T1-GE3 in its original packaging or in a dry, cool place with a relative humidity of 50% or less. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures.
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