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    Part Img SI3410DV-T1-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8A 6-TSOP
    • Original
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    SI3410DV-T1-E3 datasheet preview

    SI3410DV-T1-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
    • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device.
    • The SI3410DV-T1-E3 has built-in ESD protection, but it's still important to follow standard ESD handling precautions, such as using an ESD wrist strap, mat, or workstation, and storing the devices in anti-static packaging. Avoid touching the device pins or handling them in a way that could generate static electricity.
    • The SI3410DV-T1-E3 is a commercial-grade device, but it can be used in high-reliability or automotive applications with proper design, testing, and validation. However, it's essential to consult with Vishay Siliconix or a qualified reliability engineer to ensure the device meets the specific requirements of the application.
    • The recommended soldering and assembly techniques for the SI3410DV-T1-E3 include using a soldering iron with a temperature of 260°C (500°F) or less, and following the recommended soldering profile. Avoid using excessive force or bending the leads during assembly, and ensure the device is properly cleaned and dried before soldering.
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