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    Part Img SI3410DV-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8A 6-TSOP
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
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    SI3410DV-T1-GE3 datasheet preview

    SI3410DV-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI3410DV-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
    • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5 V and 5.5 V, and the VOUT pin to a load impedance of at least 1 kΩ. Also, ensure the EN pin is tied to a logic high (VIN) to enable the device.
    • The SI3410DV-T1-GE3 has an operating temperature range of -40°C to 125°C, making it suitable for a wide range of industrial and automotive applications.
    • The output voltage of the SI3410DV-T1-GE3 can be calculated using the formula: VOUT = (R1 / R2) * (VIN - VREF), where R1 and R2 are the resistors connected to the FB pin, VIN is the input voltage, and VREF is the internal reference voltage (1.25 V).
    • The maximum input voltage that can be applied to the SI3410DV-T1-GE3 is 6.5 V, exceeding which may cause damage to the device.
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