SI3456DDV-T1-GE3 datasheet by Vishay Siliconix

SI3456DDV-T1-GE3 Frequently Asked Questions (FAQs)

• What is the maximum junction temperature for the SI3456DDV-T1-GE3?
  The maximum junction temperature for the SI3456DDV-T1-GE3 is 150°C.
• How do I ensure stability with the SI3456DDV-T1-GE3?
  To ensure stability, use a minimum output capacitance of 10uF, and ensure the ESR (Equivalent Series Resistance) is within the recommended range of 0.1Ω to 10Ω.
• What is the recommended input capacitor value for the SI3456DDV-T1-GE3?
  The recommended input capacitor value is 1uF to 10uF, with an ESR of 0.1Ω to 10Ω.
• Can I use the SI3456DDV-T1-GE3 in a high-temperature environment?
  While the SI3456DDV-T1-GE3 can operate up to 150°C, it's recommended to derate the output current and consider thermal management for high-temperature applications.
• How do I calculate the power dissipation of the SI3456DDV-T1-GE3?
  Calculate power dissipation using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.