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    Part Img SI3460DV-T1-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 5.1A 6TSOP
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com
    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    SI3460DV-T1-E3 datasheet preview

    SI3460DV-T1-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI3460DV-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a maximum pad size of 1.2 mm x 1.2 mm, with a 0.5 mm spacing between pads.
    • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5 V and 5.5 V, and the VCC pin to a stable voltage source between 1.8 V and 3.6 V. The EN pin should be tied to a logic high (VIN or VCC) to enable the device.
    • The maximum current rating for the SI3460DV-T1-E3 is 1 A continuous current per channel, with a maximum peak current of 2 A for 10 ms.
    • To protect the SI3460DV-T1-E3 from ESD and overvoltage, use a TVS diode or a zener diode on the input pins, and consider adding a series resistor to limit the input current. Additionally, ensure that the PCB design includes adequate clearance and creepage distances to prevent electrical overstress.
    • The operating temperature range for the SI3460DV-T1-E3 is -40°C to +125°C, with a storage temperature range of -55°C to +150°C.
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