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    Part Img SI3900DV-T1-E3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 2A 6-TSOP
    • Original
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com
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    SI3900DV-T1-E3 datasheet preview

    SI3900DV-T1-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI3900DV-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8mm x 0.8mm and a thermal pad size of 2.5mm x 2.5mm.
    • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 1uF and a maximum ESR of 1 ohm. Additionally, the input capacitance should be at least 1uF with an ESR of 0.1 ohm or less.
    • The maximum ambient temperature range for the SI3900DV-T1-E3 is -40°C to 125°C, with a junction temperature range of -40°C to 150°C.
    • Yes, the SI3900DV-T1-E3 is AEC-Q100 qualified, making it suitable for use in automotive applications.
    • The power dissipation of the SI3900DV-T1-E3 can be calculated using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.
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