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    SI4178DY-T1-E3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A SO8
    • Original
    • Transferred
    • EAR99
    • Find it at Findchips.com

    SI4178DY-T1-E3 datasheet preview

    SI4178DY-T1-E3 Frequently Asked Questions (FAQs)

    • The recommended PCB layout for the SI4178DY-T1-E3 involves keeping the input and output traces as short as possible, using a solid ground plane, and placing a 10nF to 100nF bypass capacitor between the VIN pin and GND pin to reduce noise and improve stability.
    • To ensure proper thermal management, the SI4178DY-T1-E3 should be mounted on a PCB with a thermal pad connected to a large copper area, and the device should be placed in a location with good airflow. Additionally, the device's thermal resistance can be reduced by using a thermal interface material and a heat sink.
    • The maximum operating temperature range for the SI4178DY-T1-E3 is -40°C to 150°C, with a junction temperature (TJ) of up to 150°C.
    • To protect the SI4178DY-T1-E3 from overvoltage and overcurrent conditions, it is recommended to use a voltage regulator with overvoltage protection and a current limiter, such as a fuse or a current-sensing resistor, in series with the input power supply.
    • The recommended input capacitor value for the SI4178DY-T1-E3 is 10uF to 100uF, with a voltage rating of at least 2x the input voltage. A larger capacitor value can help to improve the device's power supply rejection ratio (PSRR).
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