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    Part Img SI4800BDY-T1-GE3 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 8-SOIC
    • Original
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com
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    SI4800BDY-T1-GE3 datasheet preview

    SI4800BDY-T1-GE3 Frequently Asked Questions (FAQs)

    • The recommended PCB footprint for the SI4800BDY-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Siliconix application note AN81142.
    • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 1uF with an ESR of 1ohm or less, and to place the capacitor as close to the output pin as possible.
    • The maximum input voltage that the SI4800BDY-T1-GE3 can handle is 18V. Exceeding this voltage may cause damage to the device.
    • The power dissipation of the SI4800BDY-T1-GE3 can be calculated using the formula: Pd = (Vin - Vout) x Iout. Where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.
    • Yes, the SI4800BDY-T1-GE3 is AEC-Q100 qualified and suitable for automotive applications. However, it is recommended to consult with Vishay Siliconix for specific application requirements and validation.
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