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    Part Img SI4931DY-T1-E3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 6.7A 8-SOIC
    • Original
    • Yes
    • Obsolete
    • EAR99
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    SI4931DY-T1-E3 datasheet preview

    SI4931DY-T1-E3 Frequently Asked Questions (FAQs)

    • A good PCB layout for the SI4931DY-T1-E3 involves keeping the input and output traces separate, using a solid ground plane, and minimizing the length of the input traces. Additionally, it's recommended to use a common-mode choke or a ferrite bead to filter out high-frequency noise.
    • To ensure proper biasing, make sure to follow the recommended voltage supply and current requirements outlined in the datasheet. Additionally, it's essential to decouple the power supply lines with capacitors to reduce noise and ensure stable operation.
    • The SI4931DY-T1-E3 has a maximum junction temperature of 150°C. To prevent overheating, ensure good airflow around the device, use a heat sink if necessary, and avoid operating the device near its maximum power rating for extended periods.
    • To troubleshoot issues with the SI4931DY-T1-E3, start by verifying the PCB layout and ensuring that the device is properly biased. Check for noise and oscillations on the input and output lines, and consider adding filtering or decoupling capacitors to reduce noise. If issues persist, consult the datasheet and application notes for guidance.
    • Yes, the SI4931DY-T1-E3 is a high-frequency device and requires proper EMI/EMC design considerations. Ensure that the PCB layout is designed to minimize radiation, use shielding if necessary, and follow good EMI/EMC design practices to reduce emissions and improve immunity.
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