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    SI5513DC-T1-E3 datasheet by Vishay Siliconix

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 3.1A 1206-8
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
    • Powered by Findchips Logo Findchips

    SI5513DC-T1-E3 datasheet preview

    SI5513DC-T1-E3 Frequently Asked Questions (FAQs)

    • A recommended PCB layout for optimal thermal performance would be to use a large copper area under the device, connected to a thermal pad or a heat sink, and to minimize the thermal resistance between the device and the ambient air.
    • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating temperature range, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink. Additionally, consider using thermal interface materials and following proper PCB design guidelines.
    • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially cause permanent damage to the device. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
    • To handle ESD protection during handling and assembly, follow proper ESD handling procedures, use ESD-safe materials and equipment, and ensure that the device is properly grounded during assembly. Additionally, consider using ESD protection devices or circuits in the design.
    • The recommended storage and handling conditions for the SI5513DC-T1-E3 include storing the devices in their original packaging, in a dry, cool place, away from direct sunlight and moisture. Avoid exposing the devices to extreme temperatures, humidity, or physical stress.
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